STM8601 datasheet(1/11 Pages) SAMHOP

Part #	STM8601

Description	Dual Enhancement Mode Field Effect Transistor ( N and P Channel )

PDF	11 Pages

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Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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S mHop Microelectronics C orp.

a

STM8601

Symbol

VDS

VGS

IDM

62.5

W

A

PD

°C

2.0

ID

Units

Parameter

°C/W

V

TA=25°C

Gate-Source Voltage

Drain-Source Voltage

THERMAL CHARACTERISTICS

PRODUCT SUMMARY (N-Channel)

VDSS

ID

RDS(ON) (m

Ω) Max

60V

4.5A

75 @ VGS=4.5V

58 @ VGS=10V

Dual Enhancement Mode Field Effect Transistor ( N and P Channel )

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)

Drain Current-Continuous

a

-Pulsed

b

A

Maximum Power Dissipation

a

Operating Junction and Storage

Temperature Range

TJ, TSTG

Thermal Resistance, Junction-to-Ambient

R JA

www.samhop.com.tw

Nov,06,2008

1

Details are subject to change without notice.

a

PRODUCT SUMMARY (P-Channel)

VDSS

ID

RDS(ON) (m

Ω) Max

-60V

-3.3A

150 @ VGS=-4.5V

105 @ VGS=-10V

N-Channel

P-Channel

60

±20

4.5

16

-55 to 150

TA=25°C

TA=70°C

A

3.6

TA=70°C

1.28

W

Ver 1.0

EAS

Single Pulse Avalanche Energy

d

15

20

mJ

S O-8

1

4

3

2

1

D2

D1

G 2

S 2

G 1

S 1

5

6

7

8

-60

±20

-3.3

-2.6

12

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STM8601 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp.

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