STM8601 datasheet(3/11 Pages) SAMHOP

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Symbol

Min

Typ

Max

Units

BVDSS

-60

-1

IGSS

±100

VGS(th)

-1.0

gFS

VSD

CISS

730

COSS

CRSS

12.4

10.5

Qgs

Qgd

tD(ON)

1.5

tD(OFF)

3.3

Gate-Drain Charge

VDS=-30V,VGS=0V

SWITCHING CHARACTERISTICS

Gate-Source Charge

VDD=-30V

ID=-1A

VGS=-10V

RGEN=3.3 ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

VDS=-30V,ID=-3.3A,VGS=-10V

Fall Time

Turn-On Delay Time

m ohm

VGS=-10V , ID=-3.3A

VDS=-5V , ID=-3.3A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

RDS(ON)

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

IDSS

Gate Threshold Voltage

VDS=VGS , ID=-250uA

VDS=-48V , VGS=0V

VGS= ±20V , VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

P-Channel ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

Reverse Transfer Capacitance

ON CHARACTERISTICS

-3.0

VGS=-4.5V , ID=-2.8A

105

110

150

m ohm

f=1.0MHz

VDS=-30V,ID=-3.3A,

VGS=-30V

DRAIN-SOURCE DIODE CHARACTERISTICS

VGS=0V,IS=-2A

-0.81

-1.2

Notes

STM8601

www.samhop.com.tw

Nov,06,2008

VDS=-30V,ID=-3.3A,VGS=-4.5V

6.7

-1.8

a.Surface Mounted on FR4 Board,t < 10sec.

b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

d.Starting TJ=25°C,L=0.5mH,VDD=20V,VGS=10V.(See Figure13)

Maximum Continuous Drain-Source Diode Forward Current

-2

Ver 1.0

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