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STS8235 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
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STS8235 Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
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1 / 7 page  STS8235 Symbol VDS VGS IDM A ID Units Parameter 30 4.5 18 V V ±10 Gate-Source Voltage Drain-Source Voltage PRODUCT SUMMARY VDSS ID RDS(ON) (m Ω) Max 30V 4.5A 46 @ VGS=2.5V ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Limit Drain Current-Continuous a -Pulsed b A Ver 1.0 www.samhop.com.tw Aug,14,2008 1 Details are subject to change without notice. 100 W PD °C 1.25 -55 to 150 °C/W TA=25°C THERMAL CHARACTERISTICS Maximum Power Dissipation a Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance, Junction-to-Ambient R JA a TA=70°C S urface Mount P ackage. F E AT UR E S S uper high dense cell design for low R DS (ON). R ugged and reliable. E S D P rotected. S OT26 Top View S 1 D1/D2 S 2 G 1 D1/D2 G 2 1 2 3 6 5 4 G 1 D1 S 1 G 2 D2 S 2 Dual N-Channel Enhancement Mode Field Effect Transistor S mHop Microelectronics C orp. a 36 @ VGS=4.5V TA=25°C 3.6 TA=70°C A A 0.8 |
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Similar Description - STS8235 |
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