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BQ2013H Datasheet(PDF) 21 Page - Texas Instruments |
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BQ2013H Datasheet(HTML) 21 Page - Texas Instruments |
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21 / 24 page ![]() 21 bq2013H ChangeNo. Page No. Description of Change 1 All “Final” changes from “Preliminary” version 2 3 Updated application diagram 28 Changed charge/discharge default threshold from 200 µV to 250µV. 29 Changed offset compensation window range from ±200µV to ±250µV 2 11 Designated appropriate locations from “R/W” to “R” 212 Changed charge threshold from 200 µV to 250µV 214 Changed default DMF from 200 µV to 250µV 2 16 Added REF absolute maximum rating 216 Changed charge/discharge default threshold from 200 µV to 250µV 2 16 Added VSRO parameter 2 17 Changed DQ designation to HDQ 2 17 Changed VOL from 0.5V to 0.3V (max.) 2 17 Added RPROG Note: Change 1 = Dec. 1998 changes from July 1998 “Preliminary.” Change 2 = May 1999 B changes from Dec. 1998. Data Sheet Revision History |
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