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LTC4096 Datasheet(PDF) 3 Page - Linear Technology |
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LTC4096 Datasheet(HTML) 3 Page - Linear Technology |
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3 / 16 page ![]() LTC4096/LTC4096X 3 4096xf Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: The LTC4096 is guaranteed to meet the performance specifications from 0°C to 85°C. Specifications over the – 40°C to 85°C operating temperature range are assured by design, characterization and correlation with statistical process controls. Note 3: Failure to correctly solder the Exposed Pad of the package to the PC board will result in a thermal resistance much higher than 40°C/W. See Thermal Considerations. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS ITERMINATE Charge Current Termination Threshold RITERM = 1k RITERM = 2k RITERM = 10k 88 42 6 100 50 9.5 112 58 13 mA mA mA ITRIKL Trickle Charge Current (LTC4096 Only) VBAT < VTRIKL; RIDC = 1k VBAT < VTRIKL; RIUSB = 2k 85 42 100 50 115 58 mA mA VTRIKL Trickle Charge Threshold Voltage (LTC4096 Only) VBAT Rising Hysteresis ● 2.8 2.9 135 3V mV VUVDC DCIN Undervoltage Lockout Voltage From Low to High Hysteresis 4 4.22 200 4.4 V mV VUVUSB USBIN Undervoltage Lockout Voltage From Low to High Hysteresis 3.8 4 200 4.2 V mV VASD-DC VDCIN – VBAT Lockout Threshold Voltage VDCIN from High to Low, VBAT = 4.3V VDCIN from Low to High, VBAT = 4.3V 530 100 55 mV mV VASD-USB VUSBIN – VBAT Lockout Threshold Voltage VUSBIN from High to Low, VBAT = 4.3V VUSBIN from Low to High, VBAT = 4.3V 530 150 55 mV mV VSUSP VIL, Logic Low Voltage 0.5 V VIH, Logic High Voltage 1.2 V RSUSP SUSP Pulldown Resistance ● 1.3 3.4 7 M Ω V⎯C⎯H⎯R⎯G ⎯C⎯H⎯R⎯G Output Low Voltage I⎯C⎯H⎯R⎯G = 5mA ● 62 150 mV ΔVRECHRG Recharge Battery Threshold Voltage VFLOAT – VRECHRG 30 50 80 mV tRECHRG Recharge Comparator Filter Time VBAT from High to Low 1.6 ms tTERMINATE Termination Comparator Filter Time IBAT Drops Below Termination Threshold 3 ms RON-DC Power FET “ON” Resistance (Between DCIN and BAT) 420 m Ω RON-USB Power FET “ON” Resistance (Between USBIN and BAT) 470 m Ω RDC-PWR Power FET “ON” Resistance (Between DCIN and PWR) VDCIN = 5V, VUSBIN = 0V 15 Ω RUSB-PWR Power FET “ON” Resistance (Between USBIN and PWR) VDCIN = 0V, VUSBIN = 5V 6.6 Ω TLIM Junction Temperature in Constant-Temperature Mode 115 °C ELECTRICAL CHARACTERISTICS The ● denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VDCIN = 5V, VUSBIN = 5V, RIDC = 1kΩ, RIUSB = 2kΩ, RITERM = 2kΩ unless otherwise noted. Note 4: Supply current includes IDC and ITERM pin current (approximately 100µA each) but does not include any current delivered to the battery through the BAT pin. Note 5: Supply current includes IUSB and ITERM pin current (approximately 100µA each) but does not include any current delivered to the battery through the BAT pin. Note 6: Guaranteed by long term current density limitations. Note 7: VCC is greater of DCIN or USBIN |
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