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2N6053 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # 2N6053
Description  Silicon PNP Power Transistors
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N6053 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2N6053 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2N6053 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2N6053 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon PNP Power Transistors
2N6053 2N6054
CHARACTERISTICS
Tm=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
2N6053
-60
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6054
IC=-0.1 A ;IB=0
-80
V
VCE(sat)-1
Collector-emitter saturation voltge
IC=-4A ;IB=-16mA
-2.0
V
VCE(sat)-2
Collector-emitter saturation voltage
IC=-8A ;IB=-80mA
-3.0
V
VBE(sat)
Base-emitter saturation voltage
IC=-8A ;IB=-80mA
-4.0
V
VBE
Base-emitter on voltage
IC=-4A ; VCE=-3V
-2.8
V
2N6053
VCE=-30V; IB=0
ICEO
Collector cut-off current
2N6054
VCE=-40V; IB=0
-0.5
mA
2N6053
VCE=-60V; VBE(off)=-1.5V
TC=150℃
-0.5
-5.0
ICEX
Collector cut-off current
2N6054
VCE=-80V; VBE(off)=-1.5V
TC=150℃
-0.5
-5.0
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-2.0
mA
hFE-1
DC current gain
IC=-4A ; VCE=-3V
750
18000
hFE-2
DC current gain
IC=-8A ; VCE=-3V
100
COB
Output capacitance
IE=0;VCB=-10V;f=0.1MHz
350
pF



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