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2N6053 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2N6053
Description  Silicon PNP Power Transistors
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N6053 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2N6053 2N6054
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·DARLINGTON
·Complement to type 2N6055;2N6056
APPLICATIONS
·General-purpose power amplifier and low
frequency swithing applications
PINNING (See Fig.2)
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
2N6053
-60
VCBO
Collector-base voltage
2N6054
Open emitter
-80
V
2N6053
-60
VCEO
Collector-emitter voltage
2N6054
Open base
-80
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-8
A
ICM
Collector current-peak
-16
A
IB
Base current
-120
mA
PD
Total Power Dissipation
TC=25℃
100
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-c
Thermal resistance junction to case
1.75
℃/W
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol


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