BLF574 datasheet(6/18 Pages) PHILIPS

6 / 18 page

BLF574_2

Product data sheet

Rev. 02 — 24 February 2009

6 of 18

NXP Semiconductors

BLF574

HF / VHF power LDMOS transistor

7.1.2 2-Tone CW

VDS = 50 V; IDq = 1000 mA; f = 225 MHz.

(1) PL(1dB) = 57.32 dBm (540 W)

Fig 4.

Load power as function of source power; typical values

Ps (dBm)

001aaj129

(dBm)

Ideal PL

(1)

VDS = 50 V; IDq = 1000 mA; f1 = 224.95 MHz;

f2 = 225.05 MHz.

VDS = 50 V; f1 = 224.95 MHz; f2 = 225.05 MHz.

(1) IDq = 600 mA

(2) IDq = 800 mA

(3) IDq = 1000 mA

(4) IDq = 1200 mA

(5) IDq = 1400 mA

Fig 5.

Power gain and drain efﬁciency as functions of

peak envelope load power; typical values

Fig 6.

Third order intermodulation distortion as a

function of peak envelope load power; typical

values

001aaj130

PL(PEP) (W)

800

400

200

600

(dB)

ηD

(%)

ηD

PL(PEP) (W)

800

600

200

400

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−40

−60

−20

IMD3

(dBc)

−80

(1)

(2)

(3)

(4)

(5)

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