P3304

ETALDOC 772/3

Page 2 of 5

June 2005

SPECIFICATIONS

Electrical

At T = 25ºC and as test circuit Fig. 2 unless otherwise stated.

Parameter

Conditions

Min

Typ

Max

Units

Insertion Loss

(Corrected for ratio)

f = 2kHz

-

0.9

-

dB

Frequency Response

LF -3dB cutoff

HF -3dB cutoff

200Hz – 4kHz

-

-

-

30

90

-

-

-

±0.1

Hz

kHz

dB

Return Loss

200Hz – 4kHz

-

20

-

dB

Transhybrid Loss

200Hz – 4kHz

-

30

-

dB

Third Harmonic

Distortion

(1) (3)

300Hz 0dBm in line

600Hz -10dBm in line

-

-

-70

-95

-

-

dBm

dBm

Signal Handling

(3)

300Hz Pins 1-3

200Hz Pins 1-3

300Hz Pins 4-6

200Hz Pins 4-6

-

-

-

-

3.5

2.5

2.3

1.7

-

-

-

-

Vrms

Vrms

Vrms

Vrms

Voltage Isolation

(2)

50Hz

DC

2.12

3.0

-

-

-

-

kVrms

kV

Turns ratio

(5)

Pins 1-3 : 6-4

1.50

1.50

1.50

-

Operating Range:

Functional

Storage

0

-40

-

-

+70

+85

ºC

ºC

Lumped equivalent circuit parameters as Fig. 1

DC resistance

(3)

34

23

-

-

42

28

Ω

Ω

Leakage inductance,

ΔL

1.7

-

2.8

mH

Shunt inductance, Lp

(4)

10mV 200Hz

4

6

-

H

Shunt loss, Rp

(4)

10mV 200Hz

8

10

-

k

Ω

Notes:

1. Third

harmonic

typically

exceeds

other

harmonics by 10dB.

2. Components are 100% tested at 3.25kVDC.

3. Caution:

do not pass DC through windings.

Telephone line current must be diverted using

semiconductor line hold circuit or choke.

4. At signal levels greater than 100mV, Lp will

increase and Rp will decrease slightly but the

effect is usually favourable to the return loss

characteristic.

5. Ratio is exact. For 1:1 version use P3303.

Equivalent Circuit

Fig. 1

IDEAL

1.5:1

½ L

½ L

R

R