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SID3310 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # SID3310
Description  P-Channel Enhancement Mode Power Mos.FET
PDF  5 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SID3310 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Description
The SID3310 provide the designer with the best combination of
Features
* 2.5V Gate Drive Capability
*
Simple Drive Requirement
The TO-251 is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
fast switching, ruggerized device device design, low on-resistance
and cost -effectiveness.
Elektronische Bauelemente
SID3310
-10A, -20V,RDS(ON)150m
P-Channel Enhancement Mode Power Mos.FET
Ω
S
D
G
Absolute Maximum Ratings
Drain-Source Voltage
0.01
5.0
-24
-10
-6.2
25
-20
±12
W/ C
C
Tj, Tstg
-55~+150
o
o
Thermal Resistance Junction-case
/W
C
Rthj-c
Total Power Dissipation
Parameter
Symbol
Ratings
Unit
A
V
V
A
A
ID@TC=
W
VDS
VGS
ID@TC=25
IDM
PD@TC=
100 C
o
1
C
o
Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter
Symbol
Ratings
Unit
Thermal Resistance Junction-ambient
/W
C
Rthj-a
Max.
Max.
110
o
o
Gate-Source Voltage
Continuous Drain Current,VGS@10V
Continuous Drain Current,VGS@10V
Pulsed Drain Current
ttp://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 5
such as DC/DC converters.
25 C
o
G
D
S
5.3±0.2
6.6±0.2
7.0±0.2
5.6±0.2
7.0±0.2
0.75±0.15
0.5±0.05
2.3±0.1
1.2±0.3
0.5±0.1
0.6±0.1
2.3REF.
TO-251
Dimensions in millimeters
RoHS Compliant Product


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