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SID3310 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SID3310 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 5 page ![]() Description The SID3310 provide the designer with the best combination of Features * 2.5V Gate Drive Capability * Simple Drive Requirement The TO-251 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications fast switching, ruggerized device device design, low on-resistance and cost -effectiveness. Elektronische Bauelemente SID3310 -10A, -20V,RDS(ON)150m P-Channel Enhancement Mode Power Mos.FET Ω S D G Absolute Maximum Ratings Drain-Source Voltage 0.01 5.0 -24 -10 -6.2 25 -20 ±12 W/ C C Tj, Tstg -55~+150 o o Thermal Resistance Junction-case /W C Rthj-c Total Power Dissipation Parameter Symbol Ratings Unit A V V A A ID@TC= W VDS VGS ID@TC=25 IDM PD@TC= 100 C o 1 C o Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Symbol Ratings Unit Thermal Resistance Junction-ambient /W C Rthj-a Max. Max. 110 o o Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current ttp://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 5 such as DC/DC converters. 25 C o G D S 5.3±0.2 6.6±0.2 7.0±0.2 5.6±0.2 7.0±0.2 0.75±0.15 0.5±0.05 2.3±0.1 1.2±0.3 0.5±0.1 0.6±0.1 2.3REF. TO-251 Dimensions in millimeters RoHS Compliant Product |
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