Electronic Components Datasheet Search
  English  ▼

X  

Preview PDF HTML

SID3310 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Part # SID3310
Description  P-Channel Enhancement Mode Power Mos.FET
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SID3310 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

  SID3310 Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH SID3310 Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH SID3310 Datasheet HTML 3Page - SeCoS Halbleitertechnologie GmbH SID3310 Datasheet HTML 4Page - SeCoS Halbleitertechnologie GmbH SID3310 Datasheet HTML 5Page - SeCoS Halbleitertechnologie GmbH  
Zoom Inzoom in Zoom Outzoom out
 2 / 5 page
background image
Electrical Characteristics( Tj=25 C Unless otherwise specified)
o
Notes: Pulse width limited by Max. junction temperature.
1.
-10
-24
-10A,VGS=0V,Tj=25 C
A
A
_
IS=
V
-1.2
_
_
VD=VG=0V,VS=-1.2
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
6
1.5
0.6
2.5
60
70
60
300
180
60
nC
nS
pF
VGS=0V
VDS=-6V
f=1.0MHz
VDD=-6 V
ID=-1A
VGS=- 5V
RG=6
RD=6
Ω
Ω
ID=-2.8 A
VDS=- 6V
VGS=- 5V
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
150
250
m
4.4
Ω
VGS=-4.5V, ID=-2.8A
VGS=-2.5V, ID=-2 A
_
_
S
VDS=- 5V, ID=-2.8A
_
_
_
_
20
0.1
0.5
100
-1
-25
±
V
V/
Reference to 25C, ID=-1mA
o
oC
V
nA
uA
uA
VGS=0V, ID=-250uA
VGS= 12V
±
VDS=-20V,VGS=0
VDS=-16V,VGS=0
VDS=VGS, ID=-250uA
_
_
_
_
_
_
_
_
_
_
_
-
-
-
Crss
Qg
Qgs
Qgd
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
Gfs
RDS(ON)
BVDSS
BVDS/ Tj
IDSS
VGS(th)
IGSS
_
_
_
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Static Drain-Source On-Resistance
Drain-Source Leakage Current(Tj=150 )
Forward Transconductance
oC
oC
2
2
Unit
Forward On Voltage
Continuous Source Current (Body Diode)
IS
_
Pulsed Source Current (Body Diode)
_
ISM
VSD
_
2
o
1
Source-Drain Diode
2.Pulse width 300us, dutycycle 2%.
≦
≦
ttp://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 5
Elektronische Bauelemente
SID3310
-10A, -20V,RDS(ON)150m
P-Channel Enhancement Mode Power Mos.FET
Ω



Html Pages

1 2 3 4 5


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com