Elektronische Bauelemente

SID9575

P-Channel Enhancement Mode Power MOSFET

01-June-2004 Rev. A

Page 1 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

9575

MARKING:

Date Code

GD

S

RoHS Compliant Product

A suffix of “-C” specifies halogen-free

DESCRIPTION

The SID9575 provide the designer with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness. The through-hole version (TO-251) is available for low-profile applications and

suited for low voltage applications such as DC / DC converters.

FEATURES

Simple Drive Requirement

Lower On-resistance

Fast Switching Characteristic

PACKAGE DIMENSIONS

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

-60

V

Gate-Source Voltage

±25

V

-15

A

-9.5

A

Pulsed Drain Current

1

-45

A

Total Power Dissipation

36

W

Linear Derating Factor

0.29

W / °C

Operating Junction & Storage temperature

-55~150

°C

THERMAL DATA

Parameter

Symbol

Value

Unit

Thermal Resistance Junction-case

3.5

°C / W

Thermal Resistance Junction-ambient

110

°C / W

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

6.40

6.80

G

0.50

0.70

B

5.20

5.50

H

2.20

2.40

C

6.80

7.20

J

0.45

0.55

D

7.20

7.80

K

0.45

0.60

E

2.30 REF

L

0.90

1.50

F

0.60

0.90

M

5.40

5.80