SID9575 datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SID9575

-15 A, -60 V, RDS(ON) 90 mΩ

P-Channel Enhancement Mode Power MOSFET

01-June-2004 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

-60

VGS = 0, ID = -250 uA

Breakdown Voltage Temperature Coefficient

ΔBVDSS / ΔTJ

-0.06

V / °C Reference to 25°C, ID = -1 mA

Gate Threshold Voltage

VGS(th)

-1.0

-3.0

VDS=VGS, ID= -250 uA

Forward Trans-conductance

gfs

VDS = -10V, ID = -9A

Gate-Source Leakage Current

IGSS

±100

VGS = ±25V

Drain-Source Leakage Current (TJ=25℃)

-1

VDS = -60 V, VGS = 0

Drain-Source Leakage Current (TJ=150℃)

IDSS

-25

VDS = -48 V, VGS = 0

VGS = -10 V, ID = -12A

Static Drain-Source On-Resistance

RDS(ON)

120

mΩ

VGS = -4.5 V, ID = -9 A

Total Gate Charge

Gate-Source Charge

Qgs

Gate-Drain (“Miller”) Charge

Qgd

ID = -9 A

VDS = -48 V

VGS = -4.5 V

Turn-on Delay Time

Td(on)

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

VDS = -30 V

ID = -9 A

VGS = -10 V

RG = 3.3 Ω

RD = 3.3 Ω

Input Capacitance

Ciss

1660

2660

Output Capacitance

Coss

160

Reverse Transfer Capacitance

Crss

100

VGS = 0 V

VDS = -25 V

f = 1.0 MHz

SOURCE-DRAIN DIODE

Parameter

Symbol

Min

Typ

Max

Unit

Test Conditions

Forward On Voltage

VSD

-1.2

IS = -9A, VGS = 0 V

Reverse Recovery Time

Trr

IS = -9 A, VGS = 0V

Reverse Recovery Charge

Qrr

159

dl/dt = 100 A / uS

Notes:

1. Pulse width limited by safe operating area.

2. Pulse width≦300us, duty cycle≦2%.

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