Elektronische Bauelemente

SSG

9922E

N-Channel Enhancement Mode Power Mos.FET

Ω

Description

The SSG9922E provide the designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

Features

* Optimal DC/DC Battery Application

* Low On-Resistance

Total Power Dissipation

Linear Derating Factor

Operating Junction and Storage Temperature Range

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

3

3

Pulsed Drain Current

1

Parameter

Symbol

Ratings

Unit

Thermal Data

Parameter

Symbol

Ratings

Unit

Thermal Resistance Junction-ambient

Max.

A

V

V

A

A

/W

C

W/ C

C

W

Tj, Tstg

Rthj-a

20

±12

25

6.8

5.4

2

0.016

-55~+150

62.5

3

* Capable Of 2.5V Gate Drive

o

o

o

C

o

C

o

C

o

Absolute Maximum Ratings

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

0.25

Dimensions in millimeters

6.20

5.80

1.27Typ.

0.35

0.49

4.80

5.00

0

0.100.25

1.35

1.75

0.40

0.90

0.19

0.25

3.80

4.00

0.375 REF

o

8

o

45

o

S1

G1

S2

G2

D1

D1

D2

D2

9922ESS

Date Code

1

5

7

8

2

3

4

6

D1

G1

S1

D2

G2

S2

SOP-8

01-Jun-2004 Rev. B

Page 1 of 4

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free