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SSG9922E Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Part # SSG9922E
Description  N-Channel Enhancement Mode Power Mos.FET
PDF  4 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSG9922E Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Static Drain-Source On-Resistance
Drain-Source Leakage Current (Tj=70 )
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BVDSS
BVDS/ Tj
VGS(th)
IGSS
IDSS
Crss
Qg
Qgs
Qgd
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
20
0.05
0.5
1.2
10
10
100
20
25
25
3
9
11
12
47
23
1730
280
240
±
V
V/
V
nA
uA
uA
m
nC
nS
pF
Ω
VGS=0V
VDS=20V
f=1.0MHz
VDD=15V
ID=1A
VGS=4.5V
RG=3.3
RD=15
Ω
Ω
ID=6A
VDS=16V
VGS=4.5V
VGS=4.5V, ID=6A
VGS=2.5V, ID=4A
VGS=0V, ID=250uA
VGS= 12V
±
VDS=20V,VGS=0
VDS=16V,VGS=0
VDS=VGS, ID=1mA
Reference to 25 , ID=1mA
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Forward Transconductance
Gfs
S
22
VDS=4.5V, ID=6A
_
_
_
2770
40
C
o
C
o
C
o
C
o
2
2
_
_
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Total Gate Charge
RDS(ON)
2
o
Source-Drain Diode
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Forward On Voltage
VDS
_
_
IS=0.84A , VGS=0V.
V
1.2
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width 300us, dutycycle 2%.
Reverse Recovery Time
Reverse Recovery Charge
_
_
_
_
Trr
Qrr
nC
nS
24
18
dl/dt=100A/us
2
IS=6A, VGS=0V.
≦
≦
3.Surface mounted on 1 inch2 copper pad of FR4 board; 135OC/W when mounted on min. copper pad.
2
Gate Resistance
Rg
2.2
_
_
Ω
f=1.0MHz
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2004 Rev. B
Page 2 of 4
Elektronische Bauelemente
SSG
9922E
6.8A, 20V,RDS(ON) 20m
N-Channel Enhancement Mode Power Mos.FET
Ω



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