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SSG9960 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SSG9960 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 5 page ![]() Elektronische Bauelemente SSG9960 7.8A, 40V,RDS(ON) 20m N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Total Gate Charge RDS(ON) http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Parameter Symbol Max. Typ. Test Condition Min. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current (Tj=70 ) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS BVDS/ Tj VGS(th) IGSS IDSS Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf 40 0.032 1.0 100 1 25 20 32 14.7 7.1 6.8 11.5 6.3 28.2 12.6 1725 235 145 ± V V/ V nA uA uA m nC nS pF Ω VGS=0V VDS=25V f=1.0MHz VDS=20V ID=1A VGS=10V RG=3.3 RD=20 Ω Ω ID=7A VDS=20V VGS=4.5V VGS=10V, ID=7A VGS=4.5V, ID=5A VGS=0V, ID=250uA VGS= 20V ± VDS=40V,VGS=0 VDS=32V,VGS=0 VDS=VGS, ID=250uA Reference to 25 ,ID=1mA _ _ _ Source-Drain Diode _ _ _ _ _ _ _ Parameter Symbol Max. Typ. Test Condition Min. Unit Forward On Voltage Continuous Source Current (Body Diode) VSD Is _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ IS=2.3A, VGS=0V. VD=VG G =0V, VS=1.3V V A 1.3 2.3 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width 300us, dutycycle 2%. ≦ ≦ 2 3.Surface mounted on 1 inch2 copper pad of FR4 board; t 10sec. Forward Transconductance Gfs S 25 VDS=10V, ID=7A _ _ _ _ _ _ Pulsed Source Current (Body Diode) ISM 20 A _ 3.0 ≦ o C o C o C o C o 2 2 2 Ω 01-Jun-2002 Rev. A Page 2 of 5 |
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