Elektronische Bauelemente

SSG9960

N-Channel Enhancement Mode Power Mos.FET

Ω

Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance

Fig 9. Gate Charge Characteristics

Fig 10. Typical Capacitance Characteristics

Fig 11. Forward Characteristics of

Reverse Diode

Fig 12. Gate Threshold Voltage v.s.

Junction Temperature

01-Jun-2002 Rev. A

Page

4 of 5

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Any changing of specification will not be informed individual