Elektronische Bauelemente

SSG9971

N-Channel Enhancement Mode Power Mos.FET

Ω

Description

The SSG9971 provide the designer with the best combination of fast switching,

ruggedized device design, ultra low on-resistance and cost-effectiveness.

Features

* Simple drive requirement

* Low gate charge

Total Power Dissipation

Linear Derating Factor

Operating Junction and Storage Temperature Range

A

V

V

A

A

/W

C

W/ C

C

W

Tj, Tstg

Rthj-a

60

±25

30

5.0

3.2

2.0

0.016

-55~+150

62.5

Symbol

Ratings

Unit

Parameter

Symbol

Ratings

Unit

o

o

o

C

o

C

o

C

o

Absolute Maximum Ratings

Drain-Source Voltage

Gate-Source Voltage

Thermal Resistance Junction-ambient Max.

Pulsed Drain Current

3

3

1.2

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

Parameter

Thermal Data

0.25

Dimensions in millimeters

6

.20

5.80

1.27Typ.

0.35

0.49

4.80

5.00

0

0.100.25

1.35

1.75

0.40

0.90

0.19

0.25

3.80

4.00

0.375 REF

o

8

o

45

o

S1

G1

S2

G2

D1

D1

D2

D2

9971SS

Date Code

1

5

7

8

2

3

4

6

SOP-8

01-Jun-2002 Rev. A

Page 1 of

4

D1

G1

S1

G2

D2

S2

3

RoHS Compliant Product