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SSG9971 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Part # SSG9971
Description  N-Channel Enhancement Mode Power Mos.FET
PDF  4 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSG9971 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Electrical Characteristics( Tj=25 C Unless otherwise specified)
Total Gate Charge
50
60
32.5
4.9
8.8
9.6
10
30
5.5
1658
156
109
m
nC
nS
pF
Ω
VGS=0V
VDS=25V
f=1.0MHz
VDD=30V
ID=5A
VGS=10V
RG=3.3
RD=6
Ω
Ω
ID=5.0A
VDS=48V
VGS=10V
VGS=10V, ID=5.0A
VGS=4.5V, ID=2.5A
_
_
_
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_
_
S
7
VDS=10V, ID=5.0A
_
_
_
_
_
RDS(ON)
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Static Drain-Source On-Resistance
Drain-Source Leakage Current (Tj=70 )
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BVDSS
BVDS/ Tj
VGS(th)
IGSS
IDSS
Crss
Qg
Qgs
Qgd
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
60
0.06
1.0
3.0
100
1
25
±
V
V/
V
nA
uA
uA
VGS=0V, ID=250uA
VGS= 2 V
±
5
VDS=60V,VGS=0
VDS=48V,VGS=0
VDS=VGS, ID=250uA
Reference to 25 , ID=1mA
_
_
_
_
_
_
_
_
_
_
_
Forward Transconductance
Gfs
2
2
2
o
C
o
C
o
C
o
C
o
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
Source-Drain Diode
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Forward On Voltage
VDS
_
_
IS=1.6A
29.2
48
=5.0A
, VGS=0V.
V
1.2
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width 300us, dutycycle 2%.
Reverse Recovery Time
Reverse Recovery Charge
_
_
_
_
Trr
Qrr
nC
nS
dl/dt=100A/us
2
IS
, VGS=0V.
≦
≦
3.Surface mounted on 1 inch2 copper pad of FR4 board; 125OC/W when mounted on min. copper pad.
01-Jun-2002 Rev. A
Page
2 of
4
Elektronische Bauelemente
SSG9971
5A, 60V,RDS(ON) 50m
N-Channel Enhancement Mode Power Mos.FET
Ω



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