Elektronische Bauelemente

SSP1027

-3.5 A, -20 V, RDS(ON) 97 m

Ω

P-Channel Enhancement Mode Mos.FET

01-June-2003 Rev. A

Page 1 of 4

Bottom View

B

I

G

J

PIN#1 Indent

PIN#1 Indent

F

H

K

Side View

A

D

E

C

5

1

6

2

3

4

D1

G2

S2

S1

G1

D2

TDFN

S1 G1 D2

D1 G2 S2

D1

D2

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

The SSP1027 utilized advance processing techniques to achieve the lowest possible on-resistance, extremely

efficient and cost-effectiveness device. The SSP1027 is universally used for all commercial-industrial applications.

FEATURES

Low On-Resistance

Low Gate Charge

PACKAGE DIMENSIONS

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

-20

V

Gate-Source Voltage

±12

V

Continuous Drain Current

3

-3.5

-2.8

A

Pulsed Drain Current

1

-15

A

Power Dissipation

0.7

W

Linear Derating Factor

0.006

W/℃

Operating Junction and Storage Temperature Range

-55 ~ +150

℃

THERMAL DATA

Parameter

Symbol

Ratings

Unit

Thermal Resistance Junction-ambient

98

℃

/W

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

1.900

2.100

F

0.520

0.720

B

1.900

2.100

G

0.650 TYP

H

0.200 MIN

C

0.650

0.800

I

0.150

0.350

D

0.203 REF

J

0.900

1.100

E

0.000

0.050

K

0.250

0.350