SSP1027 datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SSP1027

-3.5 A, -20 V, RDS(ON) 97 m

P-Channel Enhancement Mode Mos.FET

01-June-2003 Rev. A

Page 2 of 4

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min

Typ

Max

Unit

Test Conditions

Static

Drain-Source Breakdown Voltage

BVDSS

-20

VGS = 0, ID = -250 uA

Gate Threshold Voltage

VGS(th) -0.35

-0.8

VDS = VGS, ID = -250 uA

Gate Leakage Current

IGSS

±100

nA VDS = 0 V, VGS = ±12 V

Drain-Source Leakage Current (Tj=25℃)

-1

VDS = -20 V, VGS = 0

Drain-Source Leakage Current (Tj=70℃)

IDSS

-5

VDS = -20 V, VGS = 0, TJ = 55°C

On-State Drain Current

ID(on)

-6

VDS ≦ -5 V, VGS = -4.5 V

Forward Transconductance

gfs

VDS = -5 V, ID = -2.8 A

Diode Forward Voltage

VSD

-0.8 -0.2

IS = -1.5 A, VGS = 0 V

VGS = -4.5 V, ID = -3.4 A

120

VGS = -2.5 V, ID = -2.4 A

Drain-Source On-Resistance

RDS(ON)

123

145

mΩ

VGS = -1.8 V, ID = -1.7 A

Dynamic

Total Gate Charge

4.8

Gate-Source Charge

Qgs

1.0

Gate-Drain Charge

Qgd

1.0

nC ID = -2.8 A

VDS = -6 V

VGS = -4.5 V

Turn-on Time

Td(on)

Rise Time

Turn-off Time

Td(off)

Fall Time

VDD = -6 V

ID = -1 A

VGEN = -4.5 V

RG = 6 Ω

RL = 6 Ω

Input Capacitance

Ciss

485

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

VGS = 0 V

VDS = -6 V

f = 1.0 MHz

Notes:

1. Pulse width limited by maximum junction temperature.

2. Pulse width≦300us, dutycycle≦2%.

3. Surface mounted on 1 in

2 copper pad of FR4 board; 180 °C/W when mounted on minimum copper pad.

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