Elektronische Bauelemente

STT3585

3.5A, 20V,RDS(ON)75m

N And P-Channel Enhancement Mode Power Mos.FET

Ω

P-Channel

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveform

Fig 12. Gate Charge Waveform

180 /W

01-Jun-2002 Rev. A

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Any changing of specification will not be informed individual