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STT3585 Datasheet(PDF) 3 Page - SeCoS Halbleitertechnologie GmbH

Part # STT3585
Description  N And P-Channel Enhancement Mode Power Mos.FET
PDF  7 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

STT3585 Datasheet(HTML) 3 Page - SeCoS Halbleitertechnologie GmbH

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01-Jun-2002 Rev. A
Page
3 of 7
Electrical Characteristics( Tj=25 C Unless otherwise specified)
P-Channel
Total Gate Charge
RDS(ON)
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Static Drain-Source On-Resistance
Drain-Source Leakage Current (Tj=70 )
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BVDSS
BVDS/ Tj
VGS(th)
IGSS
IDSS
Crss
Qg
Qgs
Qgd
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
-20
-0.01
-
1.2
100
-1
-25
120
160
5
1
2
±
V
V/
V
nA
uA
uA
m
nC
nS
pF
Ω
VGS=0V
VDS=-20V
f=1.0MHz
VDS=-10V
ID=-1A
VGS=-10V
RG=3.3
RD=10
Ω
Ω
ID=-2A
VDS=-16V
VGS=-4.5V
VGS=-10V, ID=-2.8A
VGS=-4.5V, ID=-2.5A
VGS=0V, ID=-250uA
VGS=
V
±12
VDS=-20V,VGS=0
VDS=-16V,VGS=0
VDS=VGS, ID=-250uA
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Forward Transconductance
Gfs
S
4
VDS=-5V, ID=-2A
_
_
8
o
C
o
C
o
C
o
2
2
2
6
17
16
5
270
70
55
__
_
_
430
_
_
_
_
Reference to 25 ,ID=-1mA
Source-Drain Diode
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Forward On Voltage
VDS
_
_
IS=-1.2A,VGS=0V.
V
-1.2
Reverse Recovery Time
Reverse Recovery Charge
Is=-2A, V GS=0V
_
_
_
_
Trr
Qrr
nC
nS
20
15
dl/dt=100A/uS
2
2
C
o
h tp://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
≦
≦
3.Surface mounted on 1 in2 copper pad of FR4 board; 1
O
C/W when mounted on Min. copper pad.
≦
5sec;180
_
300
_
_
VGS=-2.5V, ID=-2A
t
Elektronische Bauelemente
STT3585
3.5A, 20V,RDS(ON)75m
N And P-Channel Enhancement Mode Power Mos.FET
-2.5 A, -20V,RDS(ON)160mΩ
Ω



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