EMA205B

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

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Revised May 2004

9-16 GHz Medium Power MMIC

FEATURES

•

9-16 GHz BANDWIDTH

•

+18.0 dBm TYPICAL OUTPUT POWER

•

14 dB

± 1.5 dB TYPICAL POWER GAIN

•

TWO SECTION, DISTRIBUTED AMPLIFIER

•

DUAL BIAS SUPPLY

•

0.3 MICRON RECESSED “MUSHROOM” GATE

•

•

ADVANCED EPITAXIAL HETEROJUNCTION

PROFILE PROVIDES EXTRA HIGH POWER

EFFICIENCY, AND HIGH RELIABILITY

APPLICATIONS

•

Analog and Digital Wireless Systems

•

Military Applications

•

C-Band Terrestrial Radio

Caution! ESD sensitive device.

SYMBOL

PARAMETERS/TEST CONDITIONS

1

MIN

TYP

MAX

UNITS

F

Operating Frequency Range

9

16

GHz

Ouput Power at 1dB Gain Compression @ Vdd=6V 50%

Idss

16.5

18.0

dBm

Gss

Small Signal Gain

12

14

dB

∆Gss

Small Signal Gain Flatness

± 1.5

± 2.0

dB

NF

Noise Figure

4

dB

Input RL

Input Return Loss

9

dB

Output RL

Output Return Loss

7

dB

Idd

Power Supply Current

160

mA

Vdd

Power Supply Voltage

5

8

V

Notes:

1.

Tested with 100 Ohm gate resistor.

2.

S.C.L. = Single Carrier Level.

3.

Overall Rth depends on case mounting.

Chip Size 1060 x 2000 microns

Chip Thickness: 75

± 13 microns

All Dimensions In Microns