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EMP201 Datasheet(PDF) 1 Page - Excelics Semiconductor, Inc. |
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EMP201 Datasheet(HTML) 1 Page - Excelics Semiconductor, Inc. |
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1 / 3 page ![]() EMP201 Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com 17.5 – 21.0 GHz Power Ammplifier MMIC Issued Date: 12-18-03 FEATURES • 17.5 – 21.0 GHz Bandwidth • 24.5dBm Output Power at 1dB Compression • 18.0 dB Typical Power Gain APPLICATIONS • Point-to-point and point-to-multipoint radio • Military Radar Systems Dimension: 2250um X 1000um ELECTRICAL CHARACTERISTICS (Ta = 25 °C) SYMBOL PARAMETER/TEST CONDITIONS MIN TYP MAX UNITS F Operating Frequency Range 17.5 21.0 GHz P1dB Output Power at 1dB Compression VDS = 8 V, IDSQ ≈ 1/2 IDSS 23.5 24.5 dBm Gss Small Signal Gain 16 18 dB IP3 Third Order Interception Point 31 dBm Input RL Input Return Loss 8 10 dB Output RL Output Return Loss 6 8 dB Idd Power Supply Current 150 210 mA Vdd Power Supply Voltage 7 8 V Rth Thermal Resistance (Au-Sn Eutectic Attach) 50 oC/W ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION 1,2 SYMBOL CHARACTERISTIC VALUE VDS Drain to Source Voltage 8 V VGS Gate to Source Voltage -3 V IDD Drain Current 300mA IGSF Forward Gate Current 8mA PIN Input Power @ 3dB compression TCH Channel Temperature 150°C TSTG Storage Temperature -65/150°C PT Total Power Dissipation 3.4W 1. Operating the device beyond any of the above rating may result in permanent damage. 2. Bias conditions must also satisfy the following equation VDS*IDS < (TCH –THS)/RTH; where THS = ambient temperature |
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