TMS44400, TMS44400P, TMS46400, TMS46400P

1048576-WORD BY 4-BIT

DYNAMIC RANDOM-ACCESS MEMORIES

SMHS562C – MAY 1995 – REVISED NOVEMBER 1996

11

POST OFFICE BOX 1443

PARAMETER MEASUREMENT INFORMATION

1.4 V

VCC = 3.3 V

CL = 100 pF

(see Note A)

Output Under Test

Output Under Test

CL = 100 pF

(see Note A)

(b) ALTERNATE LOAD CIRCUIT

(a) LOAD CIRCUIT

RL = 500 Ω

R1 = 1178

Ω

R2 = 868

Ω

NOTE A: CL includes probe and fixture capacitance.

Figure 3. Low-Voltage Load Circuits for Timing Parameters

RAS

CAS

A0 – A9

W

DQ1 – DQ4

tRC

Row

Column

Don’t Care

Don’t Care

Don’t Care

tRAS

tRP

tCSH

tRCD

tRSH

tCRP

tCAS

tRAD

tASC

tRAL

tASR

tRCS

tCAH

tRRH

tRCH

tCAC

tOFF

tAA

tCLZ

tRAC

tCP

See Note A

Hi-Z

tAR

tRAH

tCAL

Valid Data Out

Don’t Care

tOEZ

tROH

tOEA

Don’t Care

OE

tT

NOTE A: Output can go from the high-impedance state to an invalid-data state prior to the specified access time.

Figure 4. Read-Cycle Timing