TPIC1533

QUAD AND HEX POWER DMOS ARRAY

SLIS064 – OCTOBER 1996

3

POST OFFICE BOX 655303

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)DSX

Drain-to-source breakdown voltage

ID = 250 µA,

VGS = 0

20

V

VGS(th)

Gate-to-source threshold voltage

ID = 1 mA,

See Figure 5

VDS = VGS,

1.4

1.7

2.1

V

GS(th)

g

ID = 5 mA,

VDS = VGS

1.65

1.95

2.35

VGS(th)match Gate-to-source threshold voltage matching

ID = 5 mA,

VDS = VGS

75

mV

V(BR)

Reverse drain-to-GND breakdown voltage

Drain-to-GND current = 250

µA

(D1, D2)

20

V

V(BR)GS

Gate-to-source breakdown voltage, Q2C

IGS = 100 µA

6

V

V(BR)SG

Source-to-gate breakdown voltage, Q2C

ISG = 100 µA

0.7

V

VDS(on)

Drain-to-source on-state voltage

ID = 3 A,

See Notes 3 and 4

VGS = 10 V,

0.3

0.36

V

VF

Forward on-state voltage, GND-to-VDD1,

GND-to-VDD2

ID = 3 A (D1, D2)

See Notes 3 and 4

1.8

V

VF(SD)

Forward on state voltage source to drain

IS = 2 A,

VGS = 0,

See Notes 3 and 4 and Figure 19

1

1.2

V

VF(SD)

Forward on-state voltage, source-to-drain

IS = 3 A,

VGS = 0,

See Notes 3 and 4 and Figure 19

1.1

1.3

V

IDSS

Zero gate voltage drain current

VDS = 16 V,

TC = 25°C

0.05

1

µA

IDSS

Zero-gate-voltage drain current

DS

,

VGS = 0

TC = 125°C

0.5

10

µA

IGSSF

Forward gate current, drain short-circuited

to source

VGS = 16 V,

VDS = 0

10

100

nA

IGSSR

Reverse gate current, drain short-circuited

to source

VSG = 16 V,

VDS = 0

10

100

nA

Ilk

Leakage current, VDD1-to-GND, VDD2-to-GND,

VDGND =16V

TC = 25°C

0.05

1

µA

Ilkg

g, DD1

, DD2

,

gate shorted to source

VDGND = 16 V

TC = 125°C

0.5

10

µA

VGS = 10 V,

ID = 2 A,

TC = 25°C

0.1

0.12

rDS( )

Static drain to source on state resistance

D

,

See Notes 3 and 4

and Figure 9

TC = 125°C

0.14

0.18

Ω

rDS(on)

Static drain-to-source on-state resistance

VGS = 10 V,

ID = 3 A,

TC = 25°C

0.1

0.12

Ω

D

,

See Notes 3 and 4

and Figures 7 and 9

TC = 125°C

0.14

0.18

gf

Forward transconductance

VDS = 14 V,

ID = 1 A,

See Notes 3 and 4

1.5

2.5

S

gfs

Forward transconductance

VDS = 14 V,

ID = 1.5 A,

See Notes 3 and 4 and Figure 13

2

3

S

Ciss

Short-circuit input capacitance, common source

240

Coss

Short-circuit output capacitance, common

source

VDS = 14 V,

f=1MHz

VGS = 0,

See Figure 17

170

pF

Crss

Short-circuit reverse transfer capacitance,

common source

f = 1 MHz,

See Figure 17

130

αs

Sense-FET drain current ratio

VDS = 6 V,

ID(Q2C) = 40 µA

100

150

200

NOTES:

3. Technique should limit TJ – TC to 10°C maximum.

4. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.