TPIC6596 datasheet(3/10 Pages) TI

3 / 10 page

TPIC6596

POWER LOGIC 8-BIT SHIFT REGISTER

SLIS096 – APRIL 2000

POST OFFICE BOX 655303

• DALLAS, TEXAS 75265

schematic of inputs and outputs

EQUIVALENT OF EACH INPUT

TYPICAL OF ALL DRAIN OUTPUTS

VCC

Input

LGND

PGND

DRAIN

45 V

12 V

25 V

12 V

LGND

absolute maximum ratings over recommended operating case temperature range (unless

otherwise noted)†

Logic supply voltage, VCC (see Note 1)

7 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Logic input voltage range, VI

– 0.3 V to 7 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power DMOS drain-to-source voltage, VDS (see Note 2)

45 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous source-drain diode anode current

1 A

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulsed source-drain diode anode current

2 A

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulsed drain current, each output, all outputs on, IDn, TA = 25°C (see Note 3)

750 mA

. . . . . . . . . . . . . . . . . . .

Continuous drain current, each output, all outputs on, IDn, TA = 25°C

250 mA

. . . . . . . . . . . . . . . . . . . . . . . . . .

Peak drain current single output, IDM,TA = 25°C (see Note 3)

2 A

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Single-pulse avalanche energy, EAS (see Figure 4)

75 mJ

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Avalanche current, IAS (see Note 4)

1 A

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous total power dissipation

See Dissipation Rating Table

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating virtual junction temperature range, TJ

–40

°C to 150°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature range, Tstg

–65

°C to 150°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds

260

°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only and

functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES:

1. All voltage values are with respect to LGND and PGND.

2. Each power DMOS source is internally connected to PGND.

3. Pulse duration

≤ 100 µs, duty cycle ≤ 2 %

4. DRAIN supply voltage = 15 V, starting junction temperature (TJS) = 25°C, L = 100 mH, IAS = 1 A (see Figure 4).

DISSIPATION RATING TABLE

PACKAGE

TA ≤ 25°C

POWER RATING

DERATING FACTOR

ABOVE TA = 25°C

TA = 125°C

POWER RATING

1125 mW

9.0 mW/

°C

225 mW

1150 mW

9.2 mW/

°C

230 mW

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