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ATP212 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # ATP212
Description  General-Purpose Switching Device Applications
PDF  4 Pages
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

ATP212 Datasheet(HTML) 2 Page - Sanyo Semicon Device

  ATP212 Datasheet HTML 1Page - Sanyo Semicon Device ATP212 Datasheet HTML 2Page - Sanyo Semicon Device ATP212 Datasheet HTML 3Page - Sanyo Semicon Device ATP212 Datasheet HTML 4Page - Sanyo Semicon Device  
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ATP212
No. A1507-2/4
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transfer Admittance
| yfs |
VDS=10V, ID=18A
35
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=18A, VGS=10V
17
23
mΩ
RDS(on)2
ID=9A, VGS=4.5V
23
33
mΩ
RDS(on)3
ID=5A, VGS=4V
25
37
mΩ
Input Capacitance
Ciss
VDS=20V, f=1MHz
1820
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
150
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
100
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
16
ns
Rise Time
tr
See specified Test Circuit.
110
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
125
ns
Fall Time
tf
See specified Test Circuit.
87
ns
Total Gate Charge
Qg
VDS=30V, VGS=10V, ID=35A
34.5
nC
Gate-to-Source Charge
Qgs
VDS=30V, VGS=10V, ID=35A
6.5
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=30V, VGS=10V, ID=35A
6.8
nC
Diode Forward Voltage
VSD
IS=35A, VGS=0V
0.96
1.2
V
Package Dimensions
unit : mm (typ)
7057-001
Switching Time Test Circuit
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPAK
0.4
0.55
13
2
6.5
0.6
4
0.8
1.5
0.4
2.6
4.6
0.4
2.3
2.3
PW=10μs
D.C.≤1%
P.G
50Ω
G
S
D
ID=18A
RL=1.67Ω
VDD=30V
VOUT
ATP212
VIN
10V
0V
VIN



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