TPS2832, TPS2833

FAST SYNCHRONOUS-BUCK MOSFET DRIVER

WITH DEADTIME CONTROL

SLVS195B – JANUARY 1999 – REVISED SEPTEMBER 1999

3

POST OFFICE BOX 655303

detailed description

low-side driver

The low-side driver is designed to drive low Rds(on) N-channel MOSFETs. The current rating of the driver is

2 A, source and sink.

high-side driver

The high-side driver is designed to drive low Rds(on) N-channel MOSFETs. The current rating of the driver is

2 A, source and sink. The high-side driver can be configured as a ground-reference driver or a floating bootstrap

driver. The internal bootstrap diode, is a Schottky for improved drive efficiency. The maximum voltage that can

be applied between the BOOT terminal and ground is 30 V.

Deadtime control prevents shoot through current from flowing through the main power FETs during switching

transitions by controlling the turn-on times of the MOSFET drivers. The high-side driver is not allowed to turn

on until the gate drive voltage to the low-side FET is low, and the low-side driver is not allowed to turn on until

the voltage at the junction of the power FETs (Vdrn) is low; the DT terminal connects to the junction of the power

FETs.

The IN terminal is a digital terminal that is the input control signal for the drivers. The TPS2832 has a noninverting

input; the TPS2833 has an inverting input.

†High-level input voltages on IN and DT must be greater than or equal to VCC.