DMN3024LSD

Document Revision: 3

2 of 8

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July 2009

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DMN3024LSD

Characteristic

Symbol

Value

Unit

Drain-Source voltage

30

V

Gate-Source voltage

±20

V

Continuous Drain current

(Notes 3 & 5)

7.2

A

5.8

(Notes 2 & 5)

5.7

(Notes 2 & 6)

6.8

Pulsed Drain current

(Notes 4 & 5)

34

A

Continuous Source current (Body diode)

(Notes 3 & 5)

3.3

A

Pulsed Source current (Body diode)

(Notes 4 & 5)

34

A

Characteristic

Symbol

Value

Unit

Power dissipation

Linear derating factor

(Notes 2 & 5)

1.3

10.0

W

mW/

°C

(Notes 2 & 6)

1.8

14.3

(Notes 3 & 5)

2.0

15.9

Thermal Resistance, Junction to Ambient

(Notes 2 & 5)

100

°C/W

(Notes 2 & 6)

70

(Notes 3 & 5)

63

Thermal Resistance, Junction to Lead

(Notes 5 & 7)

53

°C/W

Operating and storage temperature range

-55 to 150

°C

Notes:

2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

3. Same as note (2), except the device is measured at t

≤ 10 sec.

4. Same as note (2), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.

5. For a dual device with one active die.

6. For a device with two active die running at equal power.

7. Thermal resistance from junction to solder-point (at the end of the drain lead): the device is operating in a steady-state condition.