DMN3024LSD

Document Revision: 3

4 of 8

www.diodes.com

July 2009

© Diodes Incorporated

A Product Line of

Diodes Incorporated

DMN3024LSD

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

30

⎯

⎯

V

Zero Gate Voltage Drain Current

⎯

⎯

0.5

μA

Gate-Source Leakage

⎯

⎯

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

1.0

⎯

3.0

V

Static Drain-Source On-Resistance (Note 8)

⎯

⎯

0.024

Ω

0.036

Forward Transconductance (Notes 8 & 9)

⎯

16.5

⎯

S

Diode Forward Voltage (Note 8)

⎯

0.82

1.2

V

Reverse recovery time (Note 9)

12

⎯

ns

Reverse recovery charge (Note 9)

⎯

4.8

⎯

nC

DYNAMIC CHARACTERISTICS (

Note 9)

Input Capacitance

⎯

608

⎯

pF

f= 1MHz

Output Capacitance

⎯

132

⎯

pF

Reverse Transfer Capacitance

⎯

71

⎯

pF

Total Gate Charge

⎯

6.3

⎯

nC

Total Gate Charge

⎯

12.9

⎯

nC

Gate-Source Charge

⎯

2.5

⎯

nC

Gate-Drain Charge

⎯

2.5

⎯

nC

Turn-On Delay Time (Note 10)

⎯

2.9

⎯

ns

Turn-On Rise Time (Note 10)

⎯

3.3

⎯

ns

Turn-Off Delay Time (Note 10)

⎯

16

⎯

ns

Turn-Off Fall Time (Note 10)

⎯

8

⎯

ns

Notes:

8. Measured under pulsed conditions. Pulse width

≤ 300μs; duty cycle ≤ 2%

9. For design aid only, not subject to production testing.

10. Switching characteristics are independent of operating junction temperatures.