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SE97 Datasheet(PDF) 38 Page - NXP Semiconductors |
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SE97 Datasheet(HTML) 38 Page - NXP Semiconductors |
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38 / 54 page ![]() SE97_5 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 05 — 6 August 2009 38 of 54 NXP Semiconductors SE97 DDR memory module temp sensor with integrated SPD, 3.3 V [1] High-voltage input voltage applied to pin A0 during RWP and CRWP operations. The JEDEC specification is 7 V (min.) and 10 V (max.), but since the SE97 EEPROM write works only down to 3.0 V, the condition of VI(ov) >4.8V+VDD or > 4.8 V + 3.0 V was applied and the minimum voltage changed to 7.8 V. If VDD is 3.6 V then the minimum voltage is 8.4 V. Table 29. DC characteristics VDD = 1.7 V to 3.6 V; Tamb = −40 °C to +125 °C; unless otherwise specified. These specifications are guaranteed by design. Symbol Parameter Conditions Min Typ Max Unit IDD(AV) average supply current SMBus inactive - 250 400 µA Isd(VDD) supply voltage shutdown mode current SMBus inactive - 0.1 5.0 µA VIH HIGH-level input voltage SCL, SDA; VDD = 3.0 V to 3.6 V 0.7 × VDD -VDD +1 V VIL LOW-level input voltage SCL, SDA; VDD = 3.0 V to 3.6 V - - 0.3 × VDD V VOL1 LOW-level output voltage 1 VDD = 3.0 V; IOL = 3 mA - - 0.4 V VOL2 LOW-level output voltage 2 VDD = 1.7 V; IOL = 1.5 mA - - 0.5 V VI(ov) overvoltage input voltage pin A0; VI(ov) − VDD > 4.8 V [1] 7.8 - 10 V VPOR power-on reset voltage power supply rising - - 1.7 V power supply falling SE97PW, SE97TK 0.1 - - V SE97TL, SE97TP 0.6 - - V IOL(sink)EVENT LOW-level output sink current on pin EVENT VOL1 = 0.4 V SE97PW, SE97TK 2 - - mA SE97TL, SE97TP 6 - - mA IOL(sink)(SDA) LOW-level output sink current on pin SDA VOL2 = 0.5 V 3 - - mA ILOH HIGH-level output leakage current EVENT; VOH =VDD −1.0 - +1.0 µA ILIH HIGH-level input leakage current SDA, SCL; VI =VDD −1.0 - +1.0 µA ILIL LOW-level input leakage current SDA, SCL; VI =VSS −1.0 - +1.0 µA A0, A1, A2; VI =VSS −1.0 - +1.0 µA Ci(SCL/SDA) SCL and SDA input capacitance - 5 10 pF IL leakage current on A0, A1, A2 - 1 - µA Ipd pull-down current internal; A0, A1, A2 pins; VI = 0.3VDD to VDD - - 4.0 µA ZIL LOW-level input impedance pins A0, A1, A2; VI < 0.3VDD 30 - - k Ω ZIH HIGH-level input impedance pins A0, A1, A2 800 - - k Ω |
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