SE97 datasheet(40/54 Pages) NXP

40 / 54 page

SE97_5

Product data sheet

Rev. 05 — 6 August 2009

40 of 54

NXP Semiconductors

SE97

DDR memory module temp sensor with integrated SPD, 3.3 V

VOL2 = 0.6 V.

VDD = 3.0 V to 3.6 V.

Fig 31. SDA output current

Fig 32. Conversion rate

VDD = 3.0 V to 3.6 V.

Fig 33. Conversion period

Fig 34. EEPROM write cycle time

For temp sensor conversion.

VDD = 3.0 V to 3.6 V.

For EEPROM read operation.

VDD = 1.7 V to 3.6 V.

Fig 35. Average power-on threshold voltage

Fig 36. Average power-on threshold voltage

Tamb (°C)

−40

120

040

002aac907

VDD = 3.6 V

3.0 V

IOL(sink)(SDA)

(mA)

Tamb (°C)

−40

120

040

002aac908

conversion rate

(conv/s)

120

100

140

Tconv

(ms)

002aac909

Tamb (°C)

−40

120

040

Tcy(W)

(ms)

Tamb (°C)

−40

120

040

002aac902

2.4

2.6

2.2

2.8

3.0

Vth

(V)

2.0

Tamb (°C)

−40

120

040

002aac903

1.2

1.4

1.6

Vth

(V)

1.0

Tamb (°C)

−40

120

040

002aac904

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