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SLD333V Datasheet(PDF) 1 Page - Sony Corporation |
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SLD333V Datasheet(HTML) 1 Page - Sony Corporation |
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1 / 4 page ![]() – 1 – E03723-PS Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. SLD333V M-248 1W High Power Laser Diode Description The SLD333V is a 1W high power laser diode designed to have a uniform emission area that is suitable for the applications of measurement and printing, etc. It adopts a φ9 package that is easy to handle. Features • High power Recommended optical power output: Po = 1W • High-optical power density: 1W/100µm (Emitting line width) Structure AlGaAs Quantum Well structure laser diode Absolute Maximum Ratings (Tc = 25°C) • Optical power output Pomax 1.1 W • Reverse voltage VR LD 3 V PD 15 V • Operating temperature (Tc) Topr –10 to +30 °C • Storage temperature Tstg –50 to +85 °C Operating Lifetime MTTF 10,000H (effective value) at Po = 1W, Tc = 25°C Warranty This warranty period shall be 90 days after receipt of the product or 1,000 hours operation time whichever is shorter. Sony Quality Assurance Department shall analyze any product that fails during said warranty period, and if the analysis results show that the product failed due to material or manufacturing defects on the part of Sony, the product shall be replaced free of charge. Laser diodes naturally have differing lifetimes which follow a Weibull distribution. Pin Configuration 2 Bottom View 1 3 1. LD cathode 2. PD anode 3. COMMON |
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