1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

AM/FM Transistor

NPN Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector – Emitter Voltage

VCEO

40

Vdc

Collector – Base Voltage

VCBO

40

Vdc

Emitter – Base Voltage

VEBO

4.0

Vdc

Collector Current — Continuous

IC

25

mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

350

2.8

mW

mW/

°C

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

1.0

8.0

Watt

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

357

°C/W

Thermal Resistance, Junction to Case

RqJC

125

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage(1)

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO

40

—

—

Vdc

Collector–Base Breakdown Voltage (IC = 100 µAdc, IE = 0)

V(BR)CBO

40

—

—

Vdc

Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0)

V(BR)EBO

4.0

—

—

Vdc

Collector Cutoff Current (VCB = 20 Vdc, IE = 0)

ICBO

—

—

100

nAdc

ON CHARACTERISTICS

DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc)

hFE

65

—

220

—

Base–Emitter On Voltage (IC = 1.0 mAdc, VCE = 10 Vdc)

VBE(on)

0.65

0.7

0.74

Vdc

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 100 MHz)

fT

—

600

—

MHz

Common Emitter Feedback Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cre

—

0.28

0.34

pF

1. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

Order this document

by BF240/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

BF240

CASE 29–04, STYLE 21

TO–92 (TO–226AA)

1

2

3

COLLECTOR

1

3

BASE

2

EMITTER

REV 1