BF844

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS

DC Current Gain(1)

(IC = 1.0 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc)

(IC = 50 mAdc, VCE = 10 Vdc)

(IC = 100 mAdc, VCE = 10 Vdc)

hFE

40

50

45

20

—

200

—

—

—

Collector – Emitter Saturation Voltage(1)

(IC = 1.0 mAdc, IB = 0.1 mAdc)

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

VCE(sat)

—

—

—

0.4

0.5

0.75

Vdc

Base – Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

VBE(sat)

—

0.75

Vdc

DYNAMIC CHARACTERISTICS

High Frequency Current Gain

(IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz)

|hfe|

1.0

—

Collector–Base Capacitance

(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)

Cob

—

6.0

pF

Emitter–Base Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Cib

—

110

pF

Turn–On Time

(VCC = 150 Vdc, VBE(off) = 4.0 V, IC = 30 mAdc, IB1 = 3.0 mAdc)

ton

—

0.6

µs

Turn–Off Time

(VCC = 150 Vdc, IC = 30 mAdc, IB1 = IB2 = 3.0 mAdc)

toff

—

10

µs

1. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.