BF844

3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

160

20

1.0

IB, BASE CURRENT (µA)

Figure 2. Collector Saturation Region

0.5

0.3

0

10

10 k

300

TA = 25°C

IC = 1.0 mA

30

100

1.0 k

3.0 k

50 k

IC, COLLECTOR CURRENT (mA)

Figure 3. On Voltages

1.0

0

0.1

30

TA = 25°C

VBE(on) @ VCE = 10 V

VCE(sat) @ IC/IB = 10

3.0

10

100

VBE(sat) @ IC/IB = 10

0.3

300

2.0

5.0

10

20

50

200 300

140

60

100

120

TA = 125°C

25

°C

–55

°C

VCE = 10 V

0.4

0.2

0.1

IC = 10 mA

1.0

0.8

0.6

0.4

0.2

80

40

100

IC = 50 mA

VCE, COLLECTOR VOLTAGE (VOLTS)

10

20

50

Figure 4. Active Region Safe Operating Area

CURRENT LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

300

200

100

20

10

1.0

100

200

500

100

µs

1.0 ms

TA = 25°C

1000

VALID FOR DUTY CYCLE

≤ 10%

1.0 s

TC = 25°C

Figure 5. Capacitance

REVERSE BIAS (VOLTS)

100

30

10

3.0

1.0

0.5

0.3

100

TA = 25°C

f = 1.0 MHz

Cib

300

1.0

2.0

5.0

10

20

50

Cob

10

3.0

2.0

1.5

1.0

0.1

30

3.0

10

0.3

100

1.0

0.2

Figure 6. High Frequency Current Gain

IC, COLLECTOR CURRENT (mA)

VCE = 10 V

f = 10 MHz

TA = 25°C

1.0

2.0

5.0

2.0