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AS8F2M32 Datasheet(PDF) 4 Page - Austin Semiconductor |
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AS8F2M32 Datasheet(HTML) 4 Page - Austin Semiconductor |
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4 / 12 page  AUSTIN SEMICONDUCTOR, INC. FLASH FLASH FLASH FLASH FLASH AS8F2M32 AS8F2M32 Rev. 2.5 05/09 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 4 Austin Semiconductor, Inc. ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (V CC = 5.0V, -55°C < T A < +125°C) MIN MAX MIN MAX MIN MAX Write Cycle Time tAVAV tWC 90 120 150 ns Chip Select Setup Time tELWL tCS 000 ns Write Enable Pulse Width tWLWH tWP 45 50 50 ns Address Setup Time tAVWL tAS 000 ns Data Setup Time tDVWH tDS 45 50 50 ns Data Hold Time tWHDX tDH 000 ns Address Hold Time tWLAX tAH 45 50 50 ns Write Enable Pulse Width High tWHWL tWPH 20 20 20 ns Duration of Byte Progreamming Operation 1 tWHWH1 300 300 300 µs Sector Erase 2 tWHWH2 15 15 15 sec Read Recovery Time before Write tGHWL 000 µs VCC Setup Time tVCS 50 50 50 µs Chip Programming Time 3 44 44 44 sec Chip Erase Time 4 256 256 256 sec Output Enable Hold Time 5 tOEH 10 10 10 ns RESET\ Pulse Width tRP 500 500 500 ns Read Cycle Time tAVAV tRC 90 120 150 ns Address Access Time tAVQV tACC 90 120 150 ns Chip Select Access Time tELQV tCE 90 120 150 ns Output Enable to Output Valid tGLQV tOE 40 50 55 ns Chip Select High to Output High 6 tEHQZ tDF 20 30 35 ns Output Enable High to Output High 6 tGHQZ tDF 20 30 35 ns Output Hold from Adresses, CS\ or OE\ Change, whichever is First tAXQX tOH 000 ns RST Low to Read Mode 6 tReady 20 20 20 µs Write Cycle Time tAVAV tWC 90 120 150 ns Write Enable Setup Time tWLEL tWS 000 ns Chip Select Pulse Width tELEH tCP 45 50 50 ns Address Setup Time tAVEL tAS 000 ns Data Setup Time tDVEH tDS 45 50 50 ns Data Hold Time tEHDX tDH 000 ns Address Hold Time tELAX tAH 45 50 50 ns Chip Select Pulse Width High tEHEL tCPH 20 20 20 ns Duration of Byte Progreamming Operation 1 tWHWH1 300 300 300 µs Sector Erase Time 2 tWHWH2 15 15 15 sec Read Recovery Time tGHEL 000 µs Chip Programming Time 3 44 44 44 sec Chip Erase Time 4 256 256 256 sec Output Enable Hold Time 5 tOEH 10 10 10 ns CS\ CONTROLLED (WRITE/ERASE/PROGRAM OPERATIONS) UNITS WE\ CONTROLLED (WRITE/ERASE/PROGRAM OPERATIONS) READ-ONLY OPERATIONS SYM -90 -120 -150 PARAMETER |
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