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INK0010AX Datasheet(PDF) 2 Page - Isahaya Electronics Corporation

Part # INK0010AX
Description  High speed switching Silicon N-channel MOSFET
PDF  4 Pages
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Manufacturer  ISAHAYA [Isahaya Electronics Corporation]
Direct Link  http://www.idc-com.co.jp
Logo ISAHAYA - Isahaya Electronics Corporation

INK0010AX Datasheet(HTML) 2 Page - Isahaya Electronics Corporation

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ＩＮＫ0010AＸ SERIES
High speed switching
Silicon N-channel MOSFET
MAXIMUM RATING（Ｔａ＝２５℃）
RATING
SYMBOL
PARAMETER
INK0010AT2
INK0010AU1
INK0010AM1
INK0010AC1
UNIT
Ｖ
DSS
Drain-source voltage
60
V
Ｖ
GSS
Gate-source voltage
±20
V
Ｉ
D
Drain current
100
mA
Ｐ
Ｄ
Total
power
dissipation
（Ta=25℃）
125（※）
150
200
mW
Ｔch
Channel temperature
+125
+150
℃
Ｔｓｔｇ
Range of Storage temperature
-55～+125
-55～+150
℃
ELECTRICAL CHARACTERISTICS（Ｔａ＝２５℃）
※package mounted on 9mm×19mm×1mm glass-epoxy substrate.
LIMIT
SYMBOL
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
V(BR)DSS
Drain-source breakdown voltage
I
D=100μA, V GS=0V
60
-
-
V
IGSS
Gate-source leak current
V
GS=±15V, VDS=0V
-
-
±1.0
μA
IDSS
Zero gate voltage drain current
V
DS=60V ,VGS=0V
-
-
1.0
μA
Vth
Gate threshold voltage
I
D=250μA, V DS= V GS
1.0
-
2.0
V
|
Yfs |
Forward transfer admittance
V
DS=10V, I D=100mA
-
200
-
mS
I
D=100mA, V GS=4.0V
-
4.0
-
RDS(on)
Static
drain-source
on-state
resistance
I
D=100mA, V GS=10.0V
-
3.0
-
Ω
Ciss
Input capacitance
V
DS=10V, V GS=0V,f=1MHz
-
20
-
pF
Coss
Output capacitance
V
DS=10V, V GS=0V,f=1MHz
-
5.0
-
pF
tON
-
27
-
tOFF
Switching time
V
DD=5V , I D=10mA
V
GS=0～5V
-
58
-
ns
Switching time test condition
ISAHAYA ELECTRONICS CORPORATION
VDD=5V
D.U.≦1%
Common source
Ta=25℃
90%
10%
90%
10%
0V
5V
VDD
VDS(ON）
ton
toff
tr
tf
5V
0
10μs
test circuit
input
waveform
output
waveform
OUT
RL
VDD
IN
50Ω
VDD=5V
D.U.≦1%
Common source
Ta=25℃
90%
10%
90%
10%
0V
5V
VDD
VDS(ON）
ton
toff
tr
tf
5V
0
10μs
test circuit
input
waveform
output
waveform
OUT
RL
VDD
IN
50Ω
OUT
RL
VDD
IN
50Ω



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