STC4516 datasheet(4/9 Pages) STANSON

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STC4516

Complementary Dual Enhancement Mode MOSFET

8.5A for N Channel / -7.2A for P Channl

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com

STC4516 2008 V1

ELECTRICAL CHARACTERISTICS ( Ta = 25

Unless otherwise noted )

℃

-N-Channel

Parameter

Symbol

Condition

Min

Typ

Max Unit

Static

Drain-Source Breakdown

Voltage

V(BR)DSS

VGS=0V,ID=250uA

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250uA

1.0

3.0

Gate Leakage Current

IGSS

VDS=0V,VGS=+20V

+100

VDS=24V,VGS=0V

Zero Gate Voltage Drain Current

IDSS

VDS=24V,VGS=0V

TJ=55℃

On-State Drain Current

ID(on)

VDS 5V,V

≧

=10V

Drain-source On-Resistance

RDS(on)

VGS=10V,ID=8.5A

VGS=4.5V,ID=7.8A

0.010

0.013

Forward Transconductance

gfs

VDS=15V,ID=6.2A

Diode Forward Voltage

VSD

IS=-2.3A,VGS=0V

0.8

1.2

Dynamic

Total Gate Charge

Gate-Source Charge

Qgs

4.2

Gate-Drain Charge

Qgd

VDS=15V,VGS=10V

ID=2A

2.5

Input Capacitance

Ciss

1350

Output Capacitance

Coss

258

Reverse Transfer Capacitance

Crss

VDS=15V,VGS=0V

f=1MHz

150

Turn-On Time

Td(on)

Turn-Off Time

Td(off)

VDD=15V,RL=15Ω

ID=5.0A,VGEN=10V

RG=1Ω

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