STC4516

Complementary Dual Enhancement Mode MOSFET

8.5A for N Channel / -7.2A for P Channl

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com

DESCRIPTION

STC4516 is the complementary enhancement mode power field effect transistor using

high cell density, DMOS trench technology. This high density process is especially

tailored to minimize on-state resistance.

PIN CONFIGURATION

FEATURE

P Channel

-30V/-7.2A, R

DS(ON)

= 22m-ohm (Typ.)

N Channel

30V/8.5A, R

DS(ON)

= 10m-ohm

30V/7.8A, R

DS(ON)

= 16m-ohm

Super high density cell design for extremely

SOP-8 package design

SOP-8

Top View

8

7

6

5

D1

D1

D2

D2

ORDERING INFORMATION

1

2

3

4

S1

G1

S2

G2

STC5416

YA

N-Channel MOSFET

P-Channel MOSFET

Y: Year Code

A: Process Code

Part Number

Package

Part Marking

STC4516S8RG

SOP-8

STC4516

STC4516S8TG

SOP-8

STC4516

※

Process Code : A ~ Z ; a ~ z

※

STC4516S8RG

S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free

※

STC4516S8TG

S8 : SOP-8 ; T : Tube ; G : Pb – Free

STC4516 2008 V1