FDMS7656AS Rev.C

www.fairchildsemi.com

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0

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V

SyncFET Schottky body diode

Characteristics

Fairchild’s SyncFET process embeds a Schottky diode in parallel

with

PowerTrench

MoSFET.

This

diode

exhibits

similar

characteristics to a discrete external Schottky diode in parallel

with a MOSFET. Figure 14 shows the reverses recovery

characteristic of the FDMS7656AS.

Schottky barrier diodes exhibit significant leakage at high tem-

perature and high reverse voltage. This will increase the power

in the device.

Figure 14. FDMS7656AS SyncFET body

diode reverse recovery characteristic

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250

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30

TIME (ns)

Figure 15. SyncFET body diode reverses

leakage versus drain-source voltage