September 2009

©2009 Fairchild Semiconductor Corporation

FDMS7656AS Rev.C

www.fairchildsemi.com

1

FDMS7656AS

30 V, 49 A, 1.8 m

Ω

Features

and high efficiency

SyncFET Schottky Body Diode

MSL1 robust package design

100% UIL tested

RoHS Compliant

General Description

The FDMS7656AS has been designed to minimize losses in

power conversion application. Advancements in both silicon and

package technologies have been combined to offer the lowest

device has the added benefit of an efficient monolithic Schottky

body diode.

Applications

Synchronous Rectifier for DC/DC Converters

Notebook Vcore/ GPU low side switch

Networking Point of Load low side switch

Telecom secondary side rectification

4

3

2

1

5

6

7

8

D

D

D

D

S

S

S

G

D

D

D

D

G

S

S

S

Pin 1

Bottom

Top

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

30

V

Gate to Source Voltage

(Note 4)

±20

V

Drain Current -Continuous (Package limited)

49

A

-Continuous (Silicon limited)

194

-Continuous

(Note 1a)

31

-Pulsed

180

dv/dt

MOSFET dv/dt

1.3

V/ns

Single Pulse Avalanche Energy

(Note 3)

242

mJ

Power Dissipation

96

W

Power Dissipation

(Note 1a)

2.5

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Resistance, Junction to Case

1.3

°C/W

Thermal Resistance, Junction to Ambient

(Note 1a)

50

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDMS7656AS

FDMS7656AS

Power 56

13 ’’

12 mm

3000 units