1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Common Anode Silicon

Dual Switching Diode

This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra

high speed switching applications. This device is housed in the SOT–416/SC–90

package which is designed for low power surface mount applications, where board

space is at a premium.

• Fast trr

• Low CD

• Available in 8 mm Tape and Reel

Rating

Symbol

Value

Unit

Reverse Voltage

VR

80

Vdc

Peak Reverse Voltage

VRM

80

Vdc

Forward Current

IF

100

mAdc

Peak Forward Current

IFM

300

mAdc

Peak Forward Surge Current

IFSM(1)

2.0

Adc

DEVICE MARKING

DAP222 = P9

THERMAL CHARACTERISTICS

Rating

Symbol

Max

Unit

Power Dissipation

PD

150

mW

Junction Temperature

TJ

150

°C

Storage Temperature

Tstg

– 55 ~ + 150

°C

Characteristic

Symbol

Condition

Min

Max

Unit

Reverse Voltage Leakage Current

IR

VR = 70 V

—

0.1

µAdc

Forward Voltage

VF

IF = 100 mA

—

1.2

Vdc

Reverse Breakdown Voltage

VR

IR = 100 µA

80

—

Vdc

Diode Capacitance

CD

VR = 6.0 V, f = 1.0 MHz

—

3.5

pF

Reverse Recovery Time

trr(2)

IF = 5.0 mA, VR = 6.0 V, RL = 100 Ω, Irr = 0.1 IR

—

4.0

ns

1. t = 1

µS

2. trr Test Circuit on following page.

Thermal Clad is a trademark of the Bergquist Company

Order this document

by DAP222/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

DAP222

SOT–416/SC–90 PACKAGE

COMMON ANODE

DUAL SWITCHING DIODE

SURFACE MOUNT

CASE 463–01, STYLE 4

SOT–416/SC–90

1

2

3

ANODE

3

12

CATHODE

REV 1