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North America Tel: 800.366.2266 / Fax: 978.366.2266

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Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

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Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

1

RoHS Compliant

Rev. V1

GaAs PIN Diode Chips

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Features

Description

Gallium

Arsenide

PIN

diodes

offer

improved

performance characteristics over silicon in many

microwave

semiconductor

applications

These

benefits result from the intrinsic semiconductor

properties of GaAs. Its inherent high carrier mobility

results in a low resistance fast switching device. The

low carrier concentration in the I region layer

produces a near zero punch through bias voltage.

Gallium Arsenide's high band gap also assures it will

operate at high operating temperatures.

Switching speeds in the low nanosecond range

using an inexpensive TTL buffer logic is attainable

with GaAs PIN diodes. This performance can be

achieved because GaAs PIN diodes exhibit high

impedance at a positive bias (up to .5V). Reverse

bias is not required for many GaAs PIN diode

applications. Low loss, in switch and phase shifter

circuits at frequencies up to 40 GHz is possible as a

result of low parasitic series resistance in the

conducting and non-conducting states.

M/A-COM’s GaAs PIN diode chips are also available

in several different package styles. See page 4

1. Exceeding these limits may cause permanent damage.

Anode

Full Area Cathode

MIL-STD 750 Environmental Ratings

Parameter

Method

Level

Temp. Cycling

1051

5cycles

-65°C to +150°C

Vibration

2056

15g’s

Constant Acceleration

2006

20,000g”s

Moisture Resistance

(Packaged diodes)

1021

10 Days

Parameter

Maximum Value

Operating Temperature

-65°C to +175°C

Storage Temperature

-65°C to +175°C

Power Dissipation

0.25W @ 25°C

Junction Temperature

+175

°C

Mounting Temperature

+320

°C for 10 seconds