1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

JFET Chopper Transistor

N–Channel — Depletion

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain – Gate Voltage

VDG

–35

Vdc

Gate – Source Voltage

VGS

–35

Vdc

Gate Current

IG

50

mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

350

2.8

mW

mW/

°C

Lead Temperature

TL

300

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 65 to +150

°C

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Gate – Source Breakdown Voltage

(IG = –1.0 µAdc)

V(BR)GSS

35

—

Vdc

Gate Reverse Current

(VGS = –15 Vdc)

IGSS

—

– 1.0

nAdc

Gate Source Cutoff Voltage

(VDS = 5.0 Vdc, ID = 1.0 µAdc)

VGS(off)

– 1.0

– 5.0

Vdc

Drain–Cutoff Current

(VDS = 5.0 Vdc, VGS = –10 Vdc)

ID(off)

—

1.0

nAdc

ON CHARACTERISTICS

Zero–Gate–Voltage Drain Current(1)

(VDS = 15 Vdc)

IDSS

5.0

—

mAdc

Static Drain–Source On Resistance

(VDS = 0.1 Vdc)

rDS(on)

—

50

Ω

Drain Gate and Source Gate On–Capacitance

(VDS = VGS = 0, f = 1.0 MHz)

Cdg(on)

+

Csg(on)

—

28

pF

Drain Gate Off–Capacitance

(VGS = –10 Vdc, f = 1.0 MHz)

Cdg(off)

—

5.0

pF

Source Gate Off–Capacitance

(VGS = –10 Vdc, f = 1.0 MHz)

Csg(off)

—

5.0

pF

1. Pulse Width = 300

µs, Duty Cycle = 3.0%.

Order this document

by J112/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

J112

CASE 29–04, STYLE 5

TO–92 (TO–226AA)

1

2

3

1 DRAIN

2 SOURCE

3

GATE

(Replaces J111/D)