TPC6902

2009-09-10

1

TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type

TPC6902

High-Speed Switching Applications

MOS Gate Drive Applications

NPN and PNP transistors are mounted on a compact and slim package.

High DC current gain

Low collector-emitter saturation voltage

High-speed switching

Rating

Characteristics

Symbol

NPN

PNP

Unit

Collector-base voltage

60

- 30

V

50

- 30

V

Collector-emitter voltage

30

- 30

V

Emitter-base voltage

7

- 7

V

DC

2.0

- 1.7

A

Collector current

(Note 1)

Pulse

8.0

- 8.0

A

Base current

0.5

- 0.5

A

Collector power

dissipation (t=10 s)

(Note 2)

Single-device

operation

1.0

W

Single-device

operation

0.7

Collector power

dissipation (DC)

(Note 2)

Single-device

value at dual

operation

0.6

W

Thermal resistance,

junction to ambient

(t=10 s)

(Note 2)

Single-device

operation

125

°C/W

Single-device

operation

178

Thermal resistance,

junction to ambient (DC)

(Note 2)

Single-device

value at dual

operation

208

°C/W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note 1: Ensure that the junction temperature does not exceed 150°C.

Note 2: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm

Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3T1A

Weight: 0.011 g (typ.)