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TPC6902 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TPC6902 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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3 / 7 page ![]() TPC6902 2009-09-10 3 Electrical Characteristics (Ta = 25°C) : NPN Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 60 V, IE = 0 ⎯ ⎯ 100 nA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ⎯ ⎯ 100 nA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 30 ⎯ ⎯ V hFE (1) VCE = 2 V, IC = 0.2 A 200 ⎯ 500 hFE (2) VCE = 2 V, IC = 0.6 A 125 ⎯ ⎯ DC current gain hFE (3) VCE = 2 V, IC = 2 A 50 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = 0.6 A, IB = 20 mA ⎯ ⎯ 0.14 V Base-emitter saturation voltage VBE (sat) IC = 0.6 A, IB = 20 mA ⎯ ⎯ 1.1 V Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ⎯ 14 ⎯ pF Rise time tr ⎯ 45 ⎯ Storage time tstg ⎯ 580 ⎯ Switching time Fall time tf See Figure 1 circuit diagram. VCC ≈ 18 V, RL = 30 Ω IB1 = IB2 = 20 mA ⎯ 45 ⎯ ns Electrical Characteristics (Ta = 25°C) : PNP Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = - 30 V, IE = 0 ⎯ ⎯ - 100 nA Emitter cut-off current IEBO VEB = - 7 V, IC = 0 ⎯ ⎯ - 100 nA Collector-emitter breakdown voltage V (BR) CEO IC = - 10 mA, IB = 0 -30 ⎯ ⎯ V hFE (1) VCE = - 2 V, IC = - 0.2 A 200 ⎯ 500 hFE (2) VCE = - 2 V, IC = - 0.6 A 125 ⎯ ⎯ DC current gain hFE (3) VCE = - 2 V, IC = -2A 50 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = - 0.6 A, IB = - 20 mA ⎯ ⎯ - 0.2 V Base-emitter saturation voltage VBE (sat) IC = - 0.6 A, IB = - 20 mA ⎯ ⎯ - 1.1 V Collector output capacitance Cob VCB = - 10 V, IE = 0, f = 1 MHz ⎯ 16.5 ⎯ pF Rise time tr ⎯ 40 ⎯ Storage time tstg ⎯ 280 ⎯ Switching time Fall time tf See Figure 2 circuit diagram. VCC ≈ - 18V, RL = 30 Ω, IB1 = IB2 = 20 mA ⎯ 40 ⎯ ns Figure 1 Switching Time Test Circuit & Timing Chart (NPN) Figure 2 Switching Time Test Circuit & Timing Chart (PNP) Duty cycle < 1% Output Input IB2 IB1 VCC RL Output Input IB2 IB1 VCC RL Duty cycle < 1% 20 μs IB1 IB2 0 20 μs IB1 IB2 0 |
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