TPC8405 datasheet(4/11 Pages) TOSHIBA

4 / 11 page

TPC8405

2009-09-29

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Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V

―

±10

μA

Drain cut-OFF current

IDSS

VDS = 30 V, VGS = 0 V

―

μA

V (BR) DSS

ID = 10 mA, VGS = 0 V

―

Drain-source breakdown

voltage

V (BR) DSX

ID = 10 mA, VGS = −20 V

―

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

1.3

―

2.5

RDS (ON)

VGS = 4.5 V, ID = 3 A

―

Drain-source ON resistance

RDS (ON)

VGS = 10 V, ID = 3 A

―

mΩ

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 3 A

―

Input capacitance

Ciss

―

1240

―

Reverse transfer capacitance

Crss

―

180

―

Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

―

230

―

Rise time

―

4.5

―

Turn-ON time

ton

―

12.5

―

Fall time

―

6.6

―

Switching time

Turn-OFF time

toff

―

Total gate charge (Gate-source

plus gate-drain)

―

Gate-source charge 1

Qgs1

―

3.9

―

Gate-drain (“miller”) charge

Qgd

VDD ≈ 24 V, VGS = 10 V, ID = 6 A

―

7.0

―

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse

current

Pulse (Note 1)

IDRP

—

Forward voltage (diode)

VDSF

IDR = 6 A, VGS = 0 V

—

−1.2

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